While your maths seem right some of your assumptions are doubtful. I'm not sure if you have acess to more information than what was in the article but I'll start there.
You have presumed the capacitors are cubes. A reasonable guess given the lack of information. Reducing the thickness between the electrodes increases the capacitance so a thinner dielectric is a very good idea. A 1 nm thick dielectric would be a good idea. A capacitor design of 2nm electrodes and 1nm dielectric would double the capacitance. OTOH that needs the dielectric has a breakdown voltage of 1Gv/m, which is pretty substantial.
Much more doubtful is that you have assumed that each holds 1 electrons charge. Given the electron radius is roughly 2.58 x 10-15m giving roughly a *potential* 3.75x 10^12 electrons spread over the whole 10 nm square area. While it's highly implausible that you could achieve this it suggests that 1 electron per capacitor is *very* conservative.
Mine's the one with "Semiconductor devices" by Sze in the pocket.
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@Steve Jones
While your maths seem right some of your assumptions are doubtful. I'm not sure if you have acess to more information than what was in the article but I'll start there.
You have presumed the capacitors are cubes. A reasonable guess given the lack of information. Reducing the thickness between the electrodes increases the capacitance so a thinner dielectric is a very good idea. A 1 nm thick dielectric would be a good idea. A capacitor design of 2nm electrodes and 1nm dielectric would double the capacitance. OTOH that needs the dielectric has a breakdown voltage of 1Gv/m, which is pretty substantial.
Much more doubtful is that you have assumed that each holds 1 electrons charge. Given the electron radius is roughly 2.58 x 10-15m giving roughly a *potential* 3.75x 10^12 electrons spread over the whole 10 nm square area. While it's highly implausible that you could achieve this it suggests that 1 electron per capacitor is *very* conservative.
Mine's the one with "Semiconductor devices" by Sze in the pocket.